The product of R DS(on) and Q G is known as the MOSFET Figure of Merit (FOM). Q G impacts directly the efficiency (the lower, the better). Q G ( total gate charge): amount of electric charge required to the gate driver to turn on/off the device itself.BV DSS ( breakdown voltage): maximum drain-to-source voltage that the device is able to sustain when in off state.The lower is R DS(on), the lower is the conduction loss due to power dissipation when the current is flowing. R DS(on) ( on-state resistance): electrical resistance when the device is set in on state.
Like many other types of semiconductor power switches, the main parameters of a MOSFET, usually available in most datasheets, are:
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